PEMBUATAN KAPASITOR DENGAN BAHAN TIMAH SELENIDA (SnSe) TEKNIK FILM TIPIS

Yusnidah Yusnidah(1),


(1) Politeknik Adiguna Maritim Indonesia Medan

Abstract


Thin film of selendia tin (SnSe) is made by the method of closed selenisation. Measurement of alternating current for samples in the form of enclosed structures with aluminum electrodes (Al/SnSe/Al) is carried out in the cryostat chamber at an intermediate temperature in the cryostat chamber at a temperature between (228-373) K. The parameters measured are capacitance for frequencies less than 50kHz, capacitance decreases, with respect to frequency and increases with temperature, whereas at frequencies greater than 50 kHz the capacity is fixed. The dielectric constant of the film is er = 12.13, calculated from the graph of capacitance with respect to the thickness of the sample (1/d).

Keywords


Thin film, tin selenide (SnSe), aluminum electrodes

Full Text:

PDF

References


Asanabe, S,. (1959). Electrical properties of stannous selenide. J. Phys. Soc. Japan 14,281-296.

Chun, D. Walser, R.M., Bene, R.W. and Courtney, T.H. (1974).Polarity dependent memory switching in device SnSe and SnSe 2 crystals, Appl, Phys. Letters, 24, 479-481.

Gould, R.D., Gravano, S. and Ismail, B. B. (1995). "A model for frequency capacitance in cadmium telluride thin films." Thin Solid Film, 198 ; 93-102.

Hutagalung S.D, (1997). Studies on SnSe and SnSe2 thin films semiconduktor, Ph,D. Thesis, University Tehnologi Malaysia.

Maissed, L.I. ,and glang, R. (1970). Handbook of thin film technology. USA Mc Graw Hill,




DOI: https://doi.org/10.34007/jons.v1i2.208

Refbacks

  • There are currently no refbacks.